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| MMDT5551 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * * * Epitaxial Planar Die Construction Complementary PNP Type Available (MMDT5401) Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 A C2 B1 E1 NEW PRODUCT Dim A B BC C1 Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 Mechanical Data * * * * * Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K4N Weight: 0.006 grams (approx.) K E2 J Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG MMDT5551 180 160 6.0 200 200 625 -55 to +150 Unit V V V mA mW K/W C Characteristic Collector Current - Continuous (Note 1) Power Dissipation (Note 1, 2) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Maximum combined dissipation. DS30172 Rev. C-1 1 of 2 KXX B2 KXX C D F H J M 0.65 Nominal H K L M D F L All Dimensions in mm MMDT5551 NEW PRODUCT Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 3) DC Current Gain Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Small Signal Current Gain Current Gain-Bandwidth Product Noise Figure Notes: @ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min 180 160 6.0 3/4 3/4 80 80 30 3/4 3/4 3/4 50 100 3/4 Max 3/4 3/4 3/4 50 50 3/4 250 3/4 0.15 0.20 1.0 Unit V V V nA mA nA Test Condition IC = 100mA, IE = 0 IC = 1.0mA, IB = 0 IE = 10mA, IC = 0 VCB = 120V, IE = 0 VCB = 120V, IE = 0, TA = 100C VEB = 4.0V, IC = 0 IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 10V, f = 1.0MHz, IE = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 200mA, RS = 1.0kW, f = 1.0kHz hFE VCE(SAT) VBE(SAT) 3/4 V V Cobo hfe fT NF 6.0 250 300 8.0 pF 3/4 MHz dB 3. Pulse test: Pulse width 300ms, duty cycle 2%. DS30172 Rev. C-1 2 of 2 MMDT5551 |
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